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HAT2085T
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0163-0500 Rev.5.00 Nov 27, 2007
Features
* Low on-resistance * Low drive current * High density mounting
Outline
RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 )
5678 DD DD
87
65 34
4G
12
1, 2, 3 4 5, 6, 7, 8
Source Gate Drain
SSS 123
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Value 200 30 1.4 11.2 1.4 1.3 150 -55 to +150 Unit V V A A A W C C
Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
REJ03G0163-0500 Rev.5.00 Nov 27, 2007 Page 1 of 6
HAT2085T
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd VDF trr Min 200 -- -- 3.0 -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 0.49 1.7 300 43 12 21 11 48 18 10 1.8 4.8 0.8 65 Max -- 0.1 1 4.5 0.64 -- -- -- -- -- -- -- -- -- -- -- 1.2 -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 30 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 0.7 A, VGS = 10 V Note 3 ID = 0.7 A, VDS = 10 V Note 3 VDS = 25 V VGS = 0 f = 1 MHz VDD 100 V, ID = 0.7 A VGS = 10 V RL = 143 Rg = 10 VDD = 160 V VGS = 10 V ID = 1.4 A IF = 1.4 A, VGS = 0 Note 3 IF = 1.4 A, VGS = 0 diF/dt = 100 A/s
REJ03G0163-0500 Rev.5.00 Nov 27, 2007 Page 2 of 6
HAT2085T
Main Characteristics
Power vs. Temperature Derating
2.0
Maximum Safe Operation Area
100
10 s
1
Pch (W)
ID (A)
Test Condition: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
10
m
PW
1.5
10
s
0
s
Channel Dissipation
1
Drain Current
1.0
DC
=
Op
10
er
m
0.1
at
ion
s
0.5
Operation in W No this area is 10 te s) 4 0.01 limited by RDS (on) Ta = 25C 1shot pulse
(P
0
0
50
100
150
200
0.001 0.1
1
10
100
1000
Ambient Temperature
Ta (C)
Drain to Source Voltage
Note 4: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
VDS (V)
Typical Output Characteristics
10
Pulse Test 10 V 8V 7V
Typical Transfer Characteristics
10
VDS = 10 V Pulse Test
(A)
(A) ID Drain Current
6V
8
8
ID
6
6
Drain Current
4
4
Tc = 75C
2
5V VGS = 4.5 V
2
25C
-25C
0 0 4 8 12 16 20
0 0 2 4 6 8 10
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source on State Resistance RDS (on) ()
Static Drain to Source on State Resistance vs. Drain Current
10
VGS = 10 V 5 Pulse Test
Drain to Source Saturation Voltage VDS (on) (V)
2.0
Pulse Test
1.5
2 1 0.5
1.0
ID = 1.4 A
0.5
1.0 A 0.5 A
0.2 0.1 0.1 0.2 0.5 1
0 0 5 10 15 20
2
5 10 20
50 100
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
REJ03G0163-0500 Rev.5.00 Nov 27, 2007 Page 3 of 6
HAT2085T
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
2.0 VGS = 10 V Pulse Test 1.5 ID = 1.4 A 1.0 10 5 VDS = 10 V Pulse Test Tc = -25C
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
2 1 0.5 0.2 0.1 0.1 75C
25C
0.5
0.5 A
0 -25
0
25
50
75
100 125 150
0.2
0.5
1
2
5
10
Case Temperature
Tc
(C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
1000 500 Ciss
Body to Drain Diode Reverse Recovery Time
1000
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
200 100 50 20 10 5 2 1 0 VGS = 0 f = 1 MHz 20 40 60 80 100 Crss Coss
200 100 50
20 10 1
di / dt = 100 A / s VGS = 0, Ta = 25C 10 100 1000
Reverse Drain Current
IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VDS (V)
ID = 2 A
Switching Characteristics
VGS (V)
16 1000 VGS = 10 V, VDD = 100 V PW = 5 s, duty 1 % 300 Rg = 10 100 30 10 3 1 0.1 0.2 tf td(off) td(on) tf tr
400
VGS 12 VDD = 50 V 100 V 160 V
300
Drain to Source Voltage
200
VDS
8
Gate to Source Voltage
Switching Time t (ns)
100
VDD = 160 V 100 V 50 V 0 4 8 12 16 20
4
tr
0
0
0.5
1
2
5
10
20
Gate Charge
Qg (nc)
Drain Current
ID (A)
REJ03G0163-0500 Rev.5.00 Nov 27, 2007 Page 4 of 6
HAT2085T
Reverse Drain Current vs. Source to Drain Voltage
10
Gate to Source Cutoff Voltage VGS (off) (V)
Gate to Source Cutoff Voltage vs. Case Temperature
5
ID = 10 mA
Reverse Drain Current IDR (A)
Pulse Test
8
4
1 mA
6
3
0.1 mA
4
10 V VGS = 0
2
2
5V
1
VDS = 10 V
0 0 0.4 0.8 1.2 1.6 2.0
0 -25
0
25
50
75
100 125 150
Source to Drain Voltage
VSD (V)
Case Temperature
Tc (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
10
1
D=1 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
ch - f (t) = s (t) * ch - f ch - f = 139C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
PDM
D= PW T
0.001
1s
0.0001 10
t ho
pu
lse
PW T
100
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (s)
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor
10
Vout Monitor D.U.T. RL
90% 10% 10% 10%
Vin Vout
Vin 10 V
VDD = 100 V
90% td(on) tr
90% td(off) tf
REJ03G0163-0500 Rev.5.00 Nov 27, 2007 Page 5 of 6
HAT2085T
Package Dimensions
Package Name TSSOP-8
JEITA Package Code P-TSSOP8-4.4 x 3-0.65
RENESAS Code PTSP0008JB-B
Previous Code TTP-8DV
MASS[Typ.] 0.037g
8
5
bp
*2 E HE
Index mark
F
*1 D
1
Z
4
*3 b p
Terminal cross section NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
xM
(Ni/Pd/Au plating)
e
c
Reference Symbol
Dimension in Millimeters
Min
L1
L
D E A2 A1 A bp b1 c c1 HE e x y Z L L1
Nom Max 3.00 3.30 4.40
A
0.03 0.07 0.10 1.10 0.15 0.20 0.25 0.10 0.15 0.20
A1
y
Detail F
0 8 6.20 6.40 6.60 0.65 0.13 0.10 0.805 0.40 0.50 0.60 1.0
Ordering Information
Part No. HAT2085T-EL-E Quantity 3000 pcs Taping Shipping Container
REJ03G0163-0500 Rev.5.00 Nov 27, 2007 Page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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(c) 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.2

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